k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 37

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
Setup Slew Rate
V
V
V
V
V
V
Falling Signal
DDQ
IH
IH
REF
IL
IL
Figure 14 - IIIustration of tangent line for tIS
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
CK
CK
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tIS
tangent
REF
line
(DC) - V
37 of 45
Setup Slew Rate
Rising Signal
tIH
IL
(AC)max]
nominal
line
=
∆TR
tangent line[V
tIS
tangent
line
∆TR
IH
(AC)min - V
tIH
V
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM