k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 29

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)
(AC)min
(DC)min
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
V
(AC)min
(DC)min
nominal
SS
(DC)
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
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Setup Slew Rate
Rising Signal
tDH
IL
(AC)max]
IL
nominal
(DC)max and V
line
=
∆TR
tangent line[V
tDS
IH
tangent
(DC)min.
line
∆TR
IH
(AC)min - V
tDH
V
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM