k4t1g084qq Samsung Semiconductor, Inc., k4t1g084qq Datasheet - Page 32

• Manufacturer Part Number: k4t1g084qq
• Description: 1gb Q-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QQ
K4T1G164QQ
K4T1G044QQ
V
V
Hold Slew Rate tangent line [ V
V
V
Rising Signal
V
V
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF(dc)
line
32 of 44
Hold Slew Rate
Falling Signal
- Vil(dc)max ]
tDH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tDS
tangent
∆TF
line
tDH
∆TF
nominal
line
Rev. 1.03 February 2008
REF(dc)
DDR2 SDRAM
]