k4t1g084qq Samsung Semiconductor, Inc., k4t1g084qq Datasheet - Page 21

• Manufacturer Part Number: k4t1g084qq
• Description: 1gb Q-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QQ
K4T1G164QQ
K4T1G044QQ
Active to active command period for 2KB page size products tRRD
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read command
Exit active power down to read command
Exit active power down to read command (slow exit, lower
power)
CKE minimum pulse width (high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asynchronously
drops LOW
Parameter
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
t
t
t
t
t
t
t
tANPD
tAXPD
tOIT
tDelay
CKE
AOND
AON
AONPD
AOFD
AOF
AOFPD
Symbol
21 of 44
tIS+tCK +tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
tAC(min)
tAC(min)
WR+tRP
8 - AL
min
200
7.5
2.5
10
35
45
7.5
15
2
3
2
3
8
0
2
2
DDR2-800
tAC(max)+1
tAC(max)+1
tAC(max) +
tAC(max)+
2.5tCK +
2tCK +
max
0.7
2.5
0.6
12
x
x
x
x
2
x
x
x
tIS+tCK +tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
WR+tRP
tAC(min)
tAC(min)
7 - AL
37.5
min
200
2.5
7.5
10
50
7.5
15
2
3
2
3
8
0
2
2
DDR2-667
tAC(max)+0.7
2tCK+tAC(ma
2.5tCK+tAC(
tAC(max)+
Rev. 1.03 February 2008
max)+1
max
x)+1
2.5
0.6
12
x
x
2
x
x
x
x
DDR2 SDRAM
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17,43,45
6,16,40
Notes
24,32
17,45
4,32
3,32
1,2
32
32
32
33
32
27
16
32
15
1