am49dl6408h Meet Spansion Inc., am49dl6408h Datasheet - Page 22
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am49dl6408h
Manufacturer Part Number
am49dl6408h
Description
Stacked Multi-chip Package Mcp Flash Memory And Sram, 64 Megabit 4 M ? 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 512 K ? 16-bit Pseudo Static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
1.AM49DL6408H.pdf
(57 pages)
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20
(Word Mode)
(Word Mode)
Addresses
Addresses
1Ah
1Bh
1Ch
1Dh
1Eh
10h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
11h
(Byte Mode)
(Byte Mode)
Addresses
Addresses
2Ch
3Ch
4Ch
20h
22h
24h
26h
28h
2Ah
2Eh
30h
32h
34h
36h
38h
3Ah
3Eh
40h
42h
44h
46h
48h
4Ah
A D V A N C E
Table 7. CFI Query Identification String
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0003h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
Data
Data
Table 8. System Interface String
Am49DL6408H
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
I N F O R M A T I O N
PP
PP
Description
Description
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
µ
N
N
s (00h = not supported)
ms
µs
March 12, 2004
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