am49dl6408h Meet Spansion Inc., am49dl6408h Datasheet - Page 13
![no-image](/images/no-image-200.jpg)
am49dl6408h
Manufacturer Part Number
am49dl6408h
Description
Stacked Multi-chip Package Mcp Flash Memory And Sram, 64 Megabit 4 M ? 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 512 K ? 16-bit Pseudo Static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
1.AM49DL6408H.pdf
(57 pages)
I
ification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
30 ns. The automatic sleep mode is independent of
the CE#f, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
I
current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
March 12, 2004
CC3
CC5
Bank 1
f in the table represents the standby current spec-
f in the table represents the automatic sleep mode
Bank
Sector
SA10
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA11
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
A D V A N C E
Table 2. Am29DL640H Sector Architecture
Sector Address
0000000000
0000000001
0000000010
0000000011
0000000100
0000000101
0000000110
0000000111
0000001xxx
0000010xxx
0000011xxx
0000100xxx
0000101xxx
0000110xxx
0001000xxx
0001001xxx
0001010xxx
0001011xxx
0001100xxx
0001101xxx
0001101xxx
0000111xxx
0001111xxx
A21–A12
RP
ACC
Am49DL6408H
, the
+
I N F O R M A T I O N
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
draws CMOS standby current (I
held at V
rent will be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not ex-
ecuting (RY/BY# pin is “1”), the reset operation is com-
pleted within a time of t
Algorithms). The system can read data t
RESET# pin returns to V
Refer to the Flash DC characteristics tables for RE-
SET# parameters and to Figure 16 for the timing dia-
gram.
Output Disable Mode
When the OE# input is at V
disabled. The output pins are placed in the high
impedance state.
Sector Size
(Kwords)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
4
4
4
4
4
4
4
READY
IL
but not within V
(during Embedded Algorithms). The
READY
IH
.
IH
SS
, output from the device is
Address Range
00000h–00FFFh
01000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–04FFFh
05000h–05FFFh
06000h–06FFFh
07000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
±0.3 V, the standby cur-
(not during Embedded
CC4
(x16)
SS
±0.3 V, the device
f). If RESET# is
RH
after the
11