m36l0r7060t1zaqe Numonyx, m36l0r7060t1zaqe Datasheet - Page 16
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m36l0r7060t1zaqe
Manufacturer Part Number
m36l0r7060t1zaqe
Description
128 Mbit Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit Burst Psram, 1.8 V Supply, Multichip Package
Manufacturer
Numonyx
Datasheet
1.M36L0R7060T1ZAQE.pdf
(22 pages)
DC and AC parameters
5
16/22
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Figure 4.
V
V
V
V
V
environment)
Ambient operating temperature
Load capacitance (C
Output circuit resistors (R
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
PPF
PPF
DDF
CCP
DDQF
supply voltage (Factory environment)
supply voltage (Application
supply voltage
supply voltage
supply voltage
Operating and AC measurement conditions
AC measurement I/O waveform
Parameter
L
)
V DDQF
1
, R
0V
2
)
conditions. Designers should check that the
–0.4
Min
–25
1.7
1.7
8.5
Flash memory
–
0 to V
V
DDQF
16.7
30
DDQF
V
DDQF
/2
Max
1.95
1.95
9.5
85
M36L0R7060T1, M36L0R7060B1
–
5
+0.4
V DDQF /2
AI06161b
Min
–25
1.7
–
–
–
–
0 to V
PSRAM
V
16.7
CCP
30
CCP
/2
Max
1.95
/2
85
–
–
–
–
2
Unit
pF
°C
kΩ
ns
V
V
V
V
V
V
V