oq2545hp NXP Semiconductors, oq2545hp Datasheet - Page 16

• Manufacturer Part Number: oq2545hp
• Description: Sdh/sonet Stm16/oc48 Laser Drivers
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2. Value based on:
3. See Fig.10 for CML symbol definitions. All CML inputs are terminated internally using 50
4. Since the TTL inputs are static, no timing specifications are given in this data sheet.
5. The response time is the time it takes the laser currents (I
6. The values are valid for capacitive loads of up to 50 pF connected to these input pins; voltage controlled with 3.9 k
7.
8.
9. The current converters consist of operational amplifiers used as unity gain amplifiers and current mirrors.
10. Although the operational amplifiers are configured as unity gain amplifiers, the response tends to peak close to the
11. To suppress supply noise in the band gap, an external capacitor of 10 nF can be connected between this pin and
12. Three series connected diodes have been integrated for measuring the junction temperature. The anode of this diode
13. Values are measured electrically and unfiltered (see Fig.11):
14. The currents flowing into pins LA and LAQ are not equal to the internal RF modulation current because of an
15. Duty factor is defined as
16. Rise and fall times are between 10% and 90% of the peak values.
17. All RF tests are done at 2.48832 Gbits/s (STM16/OC48 rate).
18. The DC current into pin IBIAS is not equal to the internal DC current because of an additional current from the internal
19. To avoid saturation of the current source on pin IBIAS, the voltage level on pin IBIAS should never be allowed to fall
1999 Aug 24
SDH/SONET STM16/OC48 laser drivers
a) External modulation current of 60 mA and internal modulation current of 20 mA giving a total modulation current
b) Bias current is 100 mA; see Section “Power consumption” for details on application specific power dissipation.
c) Pins AMPADJ and EFADJ are left open-circuit.
d) Pins LA and LAQ both terminated with 33 .
ground.
source resistance.
The specified characteristics apply for the transfer function from pin SIMOD to pins LA and LAQ or from pin SIBIAS
to pin IBIAS.
roll-off area.
V
array is connected to pin DIOA. The cathode is connected internally to V
voltage (measured with reference to V
This voltage will show a 6 mV/ C gradient over temperature.
a) Pins AMPADJ and EFADJ are left open-circuit for all measurements.
b) The external load is 33
c) The external modulation current is 60 mA.
d) Optical rise and fall times, duty factor and jitter depend on the applied filtering and the matching network between
additional current in the internal termination resistance.
termination resistors.
below the specified minimum.
EE1
mod
bias
of 80 mA.
pins LA and LAQ and the optical device used.
.
=
=
----------------- -
I
----------------- -
I
SIMOD
I
SIBIAS
I
IBIAS
mod
where I
mod
t
-------- -
T
WH
cy
is the total (internal + external) modulation current.
on pins LA and LAQ.
100%
EE2
The data stream should be ‘010101010101...’
) will be somewhere within the specified range, depending on temperature.
16
LA
and I
IBIAS
) to fall below 1 mA after pin ALS = HIGH-level.
EE2
OQ2545HP; OQ2545BHP
. With a current of 1 mA, the anode
on-chip resistors to
Product specification