uaa3535hl NXP Semiconductors, uaa3535hl Datasheet - Page 12

• Manufacturer Part Number: uaa3535hl
• Description: Low Power Gsm/dcs/pcs Multi-band Transceiver
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Notes
1. V
2. V
2000 Feb 17
V
I
V
I
V
I
V
I
V
I
Baseband section: pins IA, IB, QA and QB
V
V
Logic input levels: pins DATA, CLK, E, TXON, RXON and SYNON
V
V
CC(RFLO)
CC(SYN)
CC(IFCP)
CC(TXCP)
CC(RFCP)
CC(RFLO)
CC(SYN)
CC(IFCP)
CC(TXCP)
CC(RFCP)
I(CM)
Q(CM)
IH
IL
Low power GSM/DCS/PCS multi-band transceiver
SYMBOL
HIGH impedance.
CC(TXCP)
CC(TXCP)
= V
= V
RF LO supply voltage
RF LO supply current
synthesizers supply voltage
synthesizers supply current
transmit IF charge pump
supply voltage
transmit IF charge pump
supply current
transmit modulation loop
charge pump supply voltage
transmit modulation loop
charge pump supply current
RF charge pump supply
voltage
RF charge pump supply
current
common mode input-output
voltage I
common mode input-output
voltage Q
HIGH-level input voltage
LOW-level input voltage
CC(RFCP)
CC(RFCP)
PARAMETER
= 4.2 V; pins TXON, RXON and SYNON are HIGH impedance; pins DATA, CLK and E are
= 4.2 V; pins TXON, RXON and SYNON are LOW; pins DATA, CLK and E are HIGH.
RX and SYN mode; RF LO buffer
and divider section active
TX and SYN mode; RF LO buffer
and divider section active
SYN mode; RF LO buffer active
SYN mode; RF synthesizer
active
TXIF mode; IF synthesizer active
TXIF mode; IF LO charge pump
active; in lock
TX mode; TX RF charge pump
active; in lock; external
resistance is 1800
SYN mode; RF LO charge pump
active; in lock
V
V
I
Q
=
=
V
----------------------- -
V
--------------------------- -
IA
QA
CONDITIONS
12
+
2
+
2
V
IB
V
QB
2.4
2.4
2.4
2.4
2.4
1.15
1.15
0.9
MIN.
10
10
6
9.5
0.5
1.5
1.0
4.5
1.25
1.25
TYP.
Objective specification
UAA3535HL
3.3
3.3
3.3
4.25
4.25
1.35
1.35
0.3
MAX.
V
mA
mA
mA
V
mA
mA
V
mA
V
mA
V
mA
V
V
V
V
UNIT