std3ps25 STMicroelectronics, std3ps25 Datasheet - Page 3

• Manufacturer Part Number: std3ps25
• Description: P-channel 250v - 2.1 Ohm - 3a Dpak/ipak Mesh Overlay Mosfet
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(5) Pulse width limited by safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Symbol
Symbol
I
Symbol
V
BV
SDM
t
t
I
SD
d(on)
Q
Q
d(off)
RRM
I
Q
Q
SD
t
t
t
GSO
rr
gd
r
gs
f
g
rr
(5)
(4)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Curren
Gate-Source Breakdown
Voltage
Turn-off Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
V
R
(Resistive, see Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
Igs=± 500 µA (Open Drain)
V
R
(see test circuit, Figure 5)
SD
SD
DD
G
DD
GS
DD
DD
G
= 4.7
= 4.7
= 3A, V
= 0.60A, di/dt = 100A/µs,
= 125V, I
= 200V, I
= 10V
= 200V, I
= 40V, T
Test Conditions
Test Conditions
Test Conditions
Test Conditions
V
GS
V
GS
j
GS
D
D
D
= 150°C
= 0
= 1.5A,
= 1.5A
= 1.5A,
= 10V
= 10V
Min.
± 25
Min.
Min.
Min.
STD3PS25 - STD3PS25-1
Typ.
Typ.
Typ.
29.5
Typ.
143
806
1.4
7.6
12
22
16
11
7
Max.
Max.
Max.
Max.
1.5
21
12
3
Unit
Unit
Unit
Unit
V
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/10