std22nm20n STMicroelectronics, std22nm20n Datasheet - Page 2

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std22nm20n

Manufacturer Part Number
std22nm20n
Description
N-channel 200v - 0.088ohm - 22a Dpak Ultra Low Gate Charge Mdmesh Ii Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Table 3: Absolute Maximum ratings
(*) I
Table 4: Thermal Data
(*) When mounted on 1 inch² FR-4 board, 2 oz Cu, t
Table 5: Avalanche Characteristics
Rthj-ambT
Rthj-case
Rthj-amb
Symbol
dv/dt (2)
SD
Symbol
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
T
AS
stg
DS
GS
AS
D
22A, di/dt
j
(*)
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-pcb (*)
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max Operating Junction Temperature
400A/µs, V
j
= 25 °C, I
DD
V
D
C
(BR)DSS
GS
= 22 A, V
Parameter
= 25°C
Parameter
GS
j
= 20 k )
max)
= 0)
C
C =
DD
= 25°
sec
100°
= 50 V)
-65 to 150
Max Value
Value
± 20
13.7
1.25
200
200
100
150
100
275
0.8
380
22
88
14
43
22
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
A

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