std2n50 STMicroelectronics, std2n50 Datasheet - Page 3

• Manufacturer Part Number: std2n50
• Description: N - Channel Enhancement Mode Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
(di/dt)
Symbol
Symbol
I
V
t
SDM
t
I
r(Vof f)
S D
Q
Q
d(on)
I
Q
RRM
Q
S D
t
t
t
t
rr
gs
gd
c
r
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 50
= 50
= 50
= 2 A
= 2 A
= 200 V
= 400 V
= 400 V
= 400 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
di/dt = 100 A/ s
I
I
I
V
V
I
D
D
D
D
T
= 0
GS
GS
= 10 V
j
= 1 A
= 2 A
= 2 A
= 2 A
= 150
= 10 V
= 10 V
Thermal Impedance
o
V
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
330
2.5
35
85
28
18
25
15
45
15
5
8
Max.
Max.
Max.
120
1.5
50
25
35
25
65
2
8
STD2N50
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10