std17n06l STMicroelectronics, std17n06l Datasheet - Page 2

• Manufacturer Part Number: std17n06l
• Description: N - Channel Enhancement Mode Low Threshold Power Mos Transistor
• Manufacturer: STMicroelectronics

STD17N05L/STD17N06L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
( BR)DSS
I
thj-cas e
t hc- sin k
C
thj- amb
I
I
C
E
E
G S(th)
DS( on)
D( on)
fs
C
I
I
DS S
G SS
T
A R
A R
oss
AR
AS
iss
rss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
max,
max,
Parameter
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 5 V I
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 5 V I
> I
> I
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 25 V)
15 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
j
D
D
f = 1 MHz
max,
= 8.5 A
V
= 250 A
= 8.5 A
o
D S(on) max
D S(on) max
C unless otherwise specified)
G S
for STD17N05L
for STD17N06L
= 0
< 1%)
T
Max
Max
Typ
c
V
c
= 100
I
G S
D
= 125
= 8.5 A
= 0
o
C
o
C
Min.
Min.
Min.
50
60
17
1
5
2.73
100
275
Max Value
1.5
0.065
Typ.
Typ.
Typ.
700
250
1.6
12
70
17
60
15
12
0.085
Max.
Max.
Max.
1000
1000
0.17
250
350
100
2.5
100
Unit
Unit
Unit
o
o
o
Unit
nA
C/W
C/W
C/W
mJ
mJ
pF
pF
pF
o
V
V
V
A
S
A
A
A
A
C