std16ne10l STMicroelectronics, std16ne10l Datasheet - Page 4

• Manufacturer Part Number: std16ne10l
• Description: N - Channel 100v - 0.07 Ohm - 16a Dpak Stripfet Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
1.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
g
t
t
C
I
I
r(Voff)
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
fs
Q
t
oss
t
t
t
rss
iss
gs
gd
c
r
f
f
g
(1)
= 25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage Rise Time
Fall Time
Cross-over Time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On
Dynamic
Switching times
DS
(1)
= 0)
/off states
Parameter
Parameter
Parameter
GS
= 0)
I
V
V
T
V
V
V
V
V
I
V
V
V
V
V
R
Figure 12 on page 8
V
R
(Inductive Load, Figure 5)
D
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DSv
DS
DD
DD
clamp
G
G
= 250µA, V
= 8A
= 125°C
= 4.7Ω, V
= 4.7Ω, V
= V
= Max rating
= Max rating,
= ±20V
= 10V, I
= 5V, I
= 25V, f = 1 MHz,
= 0
= 5V
= 80V, I
= 50V, I
Test conditions
> I
Test conditions
Test conditions
= 80 V, I
GS
D(on)
, I
D
D
D
D
D
x R
= 8A
GS
= 250µA
GS
GS
= 8A
= 16A
= 8A,
D
DS(on)max
= 0
= 4.5V
= 4.5 V
= 16 A
Min.
100
Min.
Min.
1
5
0.085
Typ.
0.07
1750
Typ.
1.7
165
Typ.
5.5
45
24
11
40
80
45
12
12
17
35
9
STD16NE10L
0.085
Max.
Max.
±100
0.01
Max.
2.5
32
10
1
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
V
V
Ω
Ω