lx1214e500x NXP Semiconductors, lx1214e500x Datasheet - Page 4

• Manufacturer Part Number: lx1214e500x
• Description: Npn Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. See “Mounting recommendations in the General part of handbook SC15” .
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
1997 Feb 18
R
R
I
V
V
V
h
Class AB (CW)
mb
CBO
OPERATION
FE
(BR)CBO
(BR)CER
(BR)EBO
NPN microwave power transistor
th j-mb
th mb-h
MODE OF
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
collector cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
DC current gain
1.2 to 1.4
(GHz)
f
PARAMETER
mb
= 25 C in a common-emitter class AB amplifier.
V
(V)
24
CE
PARAMETER
0.15
I
(A)
CQ
I
I
I
I
I
E
C
C
C
C
4
= 0; V
= 22 mA
= 150 mA; R
= 22 mA
= 4.5 A; V
typ. 50
(W)
P
CONDITIONS
L1
CB
= 20 V
CE
BE
T
note 1
= 3 V
j
= 100 C
= 220
typ. 11
(dB)
CONDITIONS
G
po
45
30
3
15
MIN.
typ. 50
(%)
Preliminary specification
LX1214E500X
C
4.5
100
MAX.
MAX.
1.3
0.2
see Figs 6
Z
and 7
mA
V
V
V
( )
i
; Z
UNIT
UNIT
K/W
K/W
L