2sk1412ls Sanyo Semiconductor Corporation, 2sk1412ls Datasheet

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2sk1412ls

Manufacturer Part Number
2sk1412ls
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1412LS
Manufacturer:
SANYO
Quantity:
12 500
Ordering number : EN4228C
2SK1412LS
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : K1412
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source.
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance, low input capacitance.
Ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Micaless package facilitating mounting.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506QB MS IM TC-00000089 / N1501 TS IM TA-3431 / 51099TH (KT) / 41293TH (KOTO) AX-9637
V (BR)DSS
R DS (on)
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
SANYO Semiconductors
I D =1mA, V GS =0V
V DS =1200V, V GS =0V
V GS = 20V, V DS =0V
V DS =10V, I D =1mA
V DS =20V, I D =50mA
I D =50mA, V GS =10V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
PW 10 s, duty cycle 1%
Tc=25 C
2SK1412LS
Conditions
Conditions
DATA SHEET
min
1500
1.5
50
Ratings
typ
Ratings
100
140
3.0
40
12
--55 to +150
Continued on next page.
max
1500
150
0.1
0.2
2.0
100
100
200
20
20
3.5
No.4228-1/4
Unit
Unit
mS
nA
pF
pF
pF
W
W
V
V
A
A
V
V
C
C
A

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2sk1412ls Summary of contents

Page 1

... Reverse Transfer Capacitance Marking : K1412 (Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage ...

Page 2

... Switching Time Test Circuit V DD =200V V IN 10V =50mA =4k D PW= P.G 50 2SK1412LS Drain-to-Source Voltage --40 -- Case Temperature Unit 1 OUT ...

Page 3

... Drain-to-Source Voltage 2.4 2.0 1.6 1.2 0.8 0 100 Ambient Temperature 2SK1412LS 320 V DS =20V 280 240 200 160 120 100 ITR01048 =10V I D =50mA 1000 100 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. 2SK1412LS PS No.4228-4/4 ...

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