hy27uh088g Hynix Semiconductor, hy27uh088g Datasheet - Page 20

• Manufacturer Part Number: hy27uh088g
• Description: 8gbit 1gx8bit Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Feb. 2006
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 8: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
I
V
CC1
CC2
CC3
CC4
CC5
I
LO
OH
OL
LI
OL
IH
IL
Table 9: AC Conditions
V
V
CE=V
OUT
Test Conditions
PRE=WP=0V/Vcc
PRE=WP=0V/Vcc
IN=
CE=Vcc-0.2,
I
=0 to Vcc (max)
I
OH
0 to Vcc (max)
V
OL
t
CE=V
RC
IL
OL
=-400uA
=2.1mA
, I
=50ns
=0.4V
-
-
-
-
OUT
IH
=0mA
,
8Gbit (1Gx8bit) NAND Flash
HY27UH088G(2/D)M Series
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
0.8xVcc
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
0V to Vcc
3.3Volt
Value
Vcc/2
5ns
3.3Volt
Typ
40
40
40
40
10
-
-
-
-
-
-
Vcc+0.3
0.2xVcc
± 40
± 40
Max
200
1.5
0.4
60
60
60
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
20