bs62lv2001ti Brillance Semiconductor, bs62lv2001ti Datasheet - Page 6
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bs62lv2001ti
Manufacturer Part Number
bs62lv2001ti
Description
Very Power/voltage Cmos Sram 256k
Manufacturer
Brillance Semiconductor
Datasheet
1.BS62LV2001TI.pdf
(10 pages)
R0201-BS62LV2001
R0201-BS62LV2001
AC ELECTRICAL CHARACTERISTICS
WRITE CYCLE1
WRITE CYCLE
PARAMETER
SWITCHING WAVEFORMS (WRITE CYCLE)
JEDEC
t
t
NAME
t
t
t
t
t
t
t
t
t
t
AVAX
E1LWH
AVWL
AVWH
WLWH
WHAX
E2LAX
WLOZ
DVWH
WHDX
GHOZ
WHQX
ADDRESS
OE
CE1
CE2
WE
D
D
IN
OUT
BSI
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR1
WR2
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
(4,10)
AS
t
DESCRIPTION
OHZ
( TA = 0
(5)
(5)
t
(CE1 , WE)
AW
o
C to + 70
6
(CE2)
t
t
t
t
WC
CW
CW
WP
o
(11)
70
70
70
35
30
C, Vcc = 3.0V )
MIN. TYP. MAX.
0
0
0
0
0
0
5
(11)
(2)
BS62LV2001-70
t
--
--
--
--
--
--
--
--
--
--
--
--
DW
30
30
--
--
--
--
--
--
--
--
--
--
t
t
t
WR1
WR2
DH
(3)
100
100
100
MIN. TYP. MAX.
50
40
10
0
0
0
0
0
0
(3)
BS62LV2001-10
BS62LV2001
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40
40
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Revision 2.5
April 2002
UNIT
ns
ns
ns
ns
ns
ns
ns
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ns
ns
ns