as7c331mntd32a Alliance Memory, Inc, as7c331mntd32a Datasheet - Page 7

• Manufacturer Part Number: as7c331mntd32a
• Manufacturer: Alliance Memory, Inc

State diagram for NTD SRAM
Absolute maximum ratings
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Supply voltage for inputs
Supply voltage for I/O
Ground supply
12/23/04, V 1.6
Parameter
Parameter
Parameter
Read
Write
Read
Write
Symbol
Symbol
Alliance Semiconductor
V
V
V
V
Vss
Vss
DDQ
DDQ
DD
DD
Write
Burst
Read
Burst
V
Symbol
DD
I
T
V
V
T
OUT
, V
P
bias
stg
IN
IN
d
DDQ
®
Burst
Read
Dsel
Burst
Write
3.135
3.135
3.135
2.375
Min
Min
0
0
Min
–0.5
–0.5
–0.5
–65
–65
–
–
Dsel
Burst
Burst
Burst
Nominal
Nominal
3.3
3.3
3.3
2.5
0
0
V
AS7C331MNTD32A
AS7C331MNTD36A
V
DDQ
DD
Max
+150
+135
+4.6
1.8
20
+ 0.5
+ 0.5
3.465
3.465
3.465
2.625
Max
Max
0
0
P. 7 of 18
Unit
mA
o
o
W
V
V
V
C
C
Unit
Unit
V
V
V
V
V
V