m52d64322a Elite Semiconductor Memory Technology Inc., m52d64322a Datasheet - Page 21

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m52d64322a

Manufacturer Part Number
m52d64322a
Description
512k X 32 Bit X 4 Banks Mobile Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
ESMT
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
Elite Semiconductor Memory Technology Inc.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
( b ) C L = 3 , B L = 4
but only another bank precharge of four banks operation.
i i i ) C M D
i v ) C M D
i i ) C M D
v ) C M D
i ) C M D
C M D
C L K
D Q M
D Q
D Q M
D Q M
D Q M
D Q M
C L K
D Q M
D Q
D Q
D Q
D Q
D Q
W R
D 0
D 1
R D
R D
R D
R D
R D
D 2
W R
D 0
D 3
M a s k e d b y D Q M
* N o t e 2
* N o t e 3
W R
D 1
D 0
H i - Z
W R
Q0
D 2
D 1
D 0
* N o t e 1
H i - Z
W R
D 0
D 3
D 2
D 1
W R
D 0
D 3
D 2
D 1
D 1
D 3
D 2
D 3
D 2
D 3
Publication Date: Jan. 2009
Revision: 1.4
M52D64322A
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