isplsi2032ve-300ltn48 Lattice Semiconductor Corp., isplsi2032ve-300ltn48 Datasheet - Page 10

• Manufacturer Part Number: isplsi2032ve-300ltn48
• Description: 3.3v In-system Programmable High Density Superfast? Pld
• Manufacturer: Lattice Semiconductor Corp.

Power consumption in the ispLSI 2032VE device de-
pends on two primary factors: the speed at which the
device is operating and the number of product terms
Figure 3. Typical Device Power Consumption vs fmax
Power Consumption
I CC can be estimated for the ispLSI 2032VE using the following equation:
For ispLSI 2032VE-300 and -225: I CC (mA) = 4.5 + (# of PTs * 1.29) + (# of nets * Fmax * 0.0068)
For ispLSI 2032VE-180 and slower: I CC (mA) = 4.5 + (# of PTs * 1.05) + (# of nets * Fmax * 0.0068)
Where:
The I CC estimate is based on typical conditions (V CC = 3.3V, room temperature) and an assumption of two
GLB loads on average exists. These values are for estimates only. Since the value of I CC is sensitive to
operating conditions and the program in the device, the actual I CC should be verified.
# of PTs = Number of product terms used in design
# of nets = Number of signals used in device
Max freq = Highest clock frequency to the device (in MHz)
150
125
100
75
50
25
0
25
50
75
Notes: Configuration of two 16-bit counters
100
Typical current at 3.3V, 25° C
125
f
max (MHz)
150
10
ispLSI 2032VE-180
used. Figure 3 shows the relationship between power
and operating speed.
and slower
Specifications ispLSI 2032VE
175
200
ispLSI 2032VE-300 and -225
225
250
275
300
0127A/2032VE