ht82k75rew Holtek Semiconductor Inc., ht82k75rew Datasheet - Page 8

• Manufacturer Part Number: ht82k75rew
• Description: Ht82m75rew/ht82k75rew 2.4ghz Transceiver 8-bit Otp Mcu
• Manufacturer: Holtek Semiconductor Inc.

RF Transceiver D.C. Characteristics
Note:
RF Transceiver A.C. Characteristics
Receiver
Rev. 1.00
I
I
I
I
I
RF Input Frequency
RF Sensitivity
Maximum RF Input
Adjacent Channel Rejection
Alternative Channel Rejection
LO Leakage
Noise figure
(Including matching)
TX
RX
STB
DS
PD
Symbol
erates in Active TX mode or Active RX mode. If the RF Transceiver is active, either I
to calculate the relevant operating current of the device for different operating mode. To calculate the standby
current for the whole device, the standby current shown above including I
account for different Power Saving Mode.
* The operating current I
Parameters
RF Transceiver TX Active. At 0 dBm output power
RF Transceiver RX Active in Normal Mode (250 Kbps)
RF Transceiver RX Active in Turbo Mode (1M bps)
RF Transceiver in STANDBY mode. Partial 32MHz clock and Sleep
clock remains active. RF/MAC/BB, system clock shutdown.
RF Transceiver in DEEP_SLEEP mode. Power to digital circuit re-
mains active to retain Registers and FIFOs. All the other power is
shutdown.
RF Transceiver in POWER_DOWN mode. Minimum wake-up cir-
cuit remains active. All power is shutdown. Register and FIFO data
are not retained.
At antenna input with O-QPSK
signal, PER
@ 5MHz, 250Kbps
(-82dBm + 20 dB = -62dBm)
@ 10 MHz, 250Kbps
(-82dBm + 40 dB = -42dBm)
Measured at the balun matching the
network with the input frequency at
2.4~2.5GHz
TX
or I
Test Conditions
RX
listed here is the additional current consumed when the RF Transceiver op-
Test Conditions
0.1%
8
V
DD
=3V, Ta=25 C, LO frequency=2.445GHz, DC-DC Off
250Kbps
1 Mbps
HT82M75REW/HT82K75REW
DC-DC
Off*
DC-DC
Off*
DC-DC
Off*
2.400
Min.
STB
Min.
, I
DS
and I
Typ.
-90
-80
-62
-42
-60
20
40
TX
Typ.
5
8
3.2
0.6
21
19
21
60
PD
or I
should be taken into
RX
V
2.495
should be added
Max.
Max.
DD
10.0
2.0
30
28
30
80
June 11, 2010
=3V, Ta=25 C
GHz
dBm
dBm
dBm
dBm
dBm
dBm
Unit
Unit
dBc
dBc
mA
mA
mA
dB
A
A
A