2sd1306netl-e Renesas Electronics Corporation., 2sd1306netl-e Datasheet - Page 2

• Manufacturer Part Number: 2sd1306netl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SD1306
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Gain bandwidth product
Notes: 1. The 2SD1306 is grouped by h
Mark
h
Rev.2.00 Aug 10, 2005 page 2 of 5
FE
Grade
2. Pulse test
250 to 500
Item
ND
D
400 to 800
NE
E
FE
Symbol
V
V
V
V
h
as follows.
(BR)CBO
(BR)CEO
(BR)EBO
I
V
CE(sat)
CBO
FE
f
BE
T
*
1
Min
250
30
15
—
—
—
—
5
Typ
250
—
—
—
—
—
—
—
Max
800
1.0
1.0
0.5
—
—
—
—
MHz
Unit
V
V
V
V
V
A
I
I
I
V
V
V
I
V
C
C
E
C
CB
CE
CE
CE
= 500 mA, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 20 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Test conditions
C
C
C
C
E
BE
E
= 150 mA*
= 150 mA*
= 150 mA*
= 0
= 0
B
= 0
=
= 50 mA*
(Ta = 25°C)
2
2
2
2