2sd1306netl-e Renesas Electronics Corporation., 2sd1306netl-e Datasheet

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Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature ...

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Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Notes: 1. ...

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Main Characteristics Maximum Collector Dissipation Curve 150 100 Ambient Temperature Ta (°C) Typical Output Characteristics 100 0.2 0.4 0 Collector to Emitter Voltage V DC Current Transfer Ratio vs. Collector Current 1,000 ...

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Gain Bandwidth Product vs. Collector Current 1,000 500 200 100 Collector Current I On Resistance vs. Base Current 10 3 1.0 0.3 0.1 0.1 0.3 1.0 Base ...

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... A-A Section Ordering Information Part Name 2SD1306NDTL-E 3000 2SD1306NETL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK(T) / MPAK(T)V, 0.011g ...

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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...