74AUP1G00GW,125 NXP Semiconductors, 74AUP1G00GW,125 Datasheet - Page 9

• Manufacturer Part Number: 74AUP1G00GW,125
• Description: IC 2-IN NAND GATE LP 5-TSSOP
• Manufacturer: NXP Semiconductors
• Series: 74AUPr

Specifications of 74AUP1G00GW,125

• Number Of Circuits: 1
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Logic Type: NAND Gate
• Number Of Inputs: 2
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Product: NAND
• Logic Family: 74AUP
• High Level Output Current: - 4 mA
• Low Level Output Current: 4 mA
• Propagation Delay Time: 17.5 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 0.8 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 125 C
• Output Current: 20 mA
• Output Voltage: 3.6 V
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2546-2; 935278998125

NXP Semiconductors
Table 8.
Voltages are referenced to GND (ground = 0 V); for test circuit see
[1]
[2]
[3]
Table 9.
Voltages are referenced to GND (ground = 0 V); for test circuit see
74AUP1G00
Product data sheet
Symbol
T
C
Symbol
C
t
C
t
pd
pd
amb
PD
L
L
= 5 pF
= 10 pF
All typical values are measured at nominal V
t
C
P
f
f
C
V
N = number of inputs switching;
Σ(C
pd
i
o
D
CC
= 25 °C
PD
= input frequency in MHz;
L
= output frequency in MHz;
is the same as t
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
× V
PD
Dynamic characteristics
Dynamic characteristics
CC
Parameter
power dissipation capacitance f = 1 MHz; V
Parameter
propagation delay
propagation delay
× V
2
× f
CC
o
2
) = sum of the outputs.
× f
PLH
i
× N + Σ(C
and t
PHL
L
.
× V
Conditions
A, B to Y; see
A, B to Y; see
CC
V
V
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
2
…continued
× f
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
o
All information provided in this document is subject to legal disclaimers.
) where:
CC
Conditions
.
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
Figure 7
Figure 7
Rev. 3 — 7 October 2010
= 0.8 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
D
I
= GND to V
in μW).
[1]
[1]
Figure 8
Figure 8
CC
−40 °C to +85 °C
Min
2.1
2.2
2.2
1.8
1.4
1.1
1.0
1.9
1.3
1.2
[3]
Min
-
-
-
-
-
-
Max
12.2
14.4
7.8
6.2
4.7
4.2
9.2
7.3
5.6
4.9
Low-power 2-input NAND gate
Typ
2.6
2.8
2.9
3.1
3.6
4.2
−40 °C to +125 °C
Min
74AUP1G00
2.1
1.8
1.4
1.1
1.0
2.2
2.2
1.9
1.3
1.2
[1]
Max
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
13.5
15.9
10.2
8.6
6.9
5.2
4.7
8.1
6.2
5.4
Unit
pF
pF
pF
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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