ne68039-t1 Renesas Electronics Corporation., ne68039-t1 Datasheet - Page 3

• Manufacturer Part Number: ne68039-t1
• Description: Necs Npn Silicon High Frequency Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result in
2. Maximum T
SYMBOLS
permanent damage.
V
V
V
T
CBO
CEO
EBO
T
STG
I
C
J
13
12
10
25
14
30
20
15
10
11
9
8
7
6
5
3
2
5
0
4
1
0.1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
J
for the NE68035 is 200°C.
FORWARD INSERTION GAIN
PARAMETERS
2
0.2 0.3
AND MAXIMUM AVAILABLE
|S
COLLECTOR CURRENT
Collector Current, I
21
GAIN vs. FREQUENCY
3
INSERTION GAIN vs.
|
2
Frequency, f (GHz)
0.5 0.7 1
5
NE68035
NE68039
7
MAG
10
20 30
2
C
(mA)
f = 4 GHz
f = 2 GHz
f = 3 GHz
3
UNITS
V
mA
°C
°C
CE
V
V
V
50 70 100
5
= 6 V
7
1
(T
10
-65 to +150
RATINGS
A
(T
150
= 25°C)
1.5
20
10
35
A
= 25°C)
2
400
300
200
100
12
10
30
25
20
15
10
0
8
6
4
2
0
5
0
0
1
0.1
NE68019
NE68033
NE68039
DC POWER DERATING CURVES
FORWARD INSERTION GAIN
0.2 0.3
Ambient Temperature, T
2
AND MAXIMUM AVAILABLE
COLLECTOR CURRENT
Collector Current, I
GAIN vs. FREQUENCY
INSERTION GAIN vs.
3
50
Frequency, f (GHz)
NE68035
0.5 0.7 1
5
NE68033
NE68035
7
NE68033
|S
10
100
21
|
2
20
2
C
V
I
C
CE
(mA)
V
f = 2 GHz
= 10 mA
30
3
CE
A
150
= 6 V
(°C)
= 6 V
50 70 100
MAG
5
7 10
200