ne68039-t1 Renesas Electronics Corporation., ne68039-t1 Datasheet - Page 2

• Manufacturer Part Number: ne68039-t1
• Description: Necs Npn Silicon High Frequency Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW350 µs, duty cycle 2%.
ELECTRICAL CHARACTERISTICS
SYMBOLS
SYMBOLS
R
R
R
R
|S
|S
TH (J- C)
MAG
GNF
C
TH (J-A)
TH (J- C)
I
MAG
I
GNF
Cre
TH (J-A)
I
I
h
NF
CBO
EBO
h
21E
P
NF
CBO
EBO
P
f
RE 3
21E
f
FE
T
FE
T
T
T
3
|
|
2
2
Gain Bandwidth Product at V
Noise Figure at V
Associated Gain at V
Maximum Available Gain at V
Insertion Power Gain at V
Forward Current Gain
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Gain Bandwidth Product at V
Noise Figure at V
Associated Gain at V
Maximum Available Gain at V
Insertion Power Gain at V
Forward Current Gain
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at
V
V
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
CB
CE
= 3V, I
= 10 V, I
EIAJ
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
1
E
PARAMETERS AND CONDITIONS
REGISTERED NUMBER
= 0 mA, f = 1 MHz
E
PART NUMBER
EIAJ
= 0 mA, f = 1 MHz
CE
CE
PACKAGE OUTLINE
1
= 6 V, I
REGISTERED NUMBER
= 6 V, I
CE
CE
PART NUMBER
2
2
at V
at V
= 6 V, I
= 6 V, I
CE
CE
V
EB
V
EB
CE
C
CE
CB
CE
C
CE
CB
CB
= 6 V, I
CE
= 6 V, I
CE
= 5 mA, f = 1 GHz
= 1V, I
CE
= 5 mA, f = 1 GHz
= 1V, I
CE
= 6 V, I
= 6 V, I
= 3 V, I
= 1 V, I
= 3 V, I
C
= 10 V, I
C
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 5 mA,
= 5 mA,
C
C
C
C
C
= 10 mA,
= 0 mA
C
E
C
= 0 mA
= 10 mA,
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
C
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 2 GHz
C
(T
= 10 mA
C
= 0 mA, f = 1 MHz
(T
C
= 5 mA
E
= 10 mA
C
= 5 mA
E
= 10 mA
= 10 mA
A
= 10 mA
= 0 mA
A
= 0 mA
= 10 mA
= 25°C)
= 25°C)
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
°C/W
GHz
°C/W
mW
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µA
µA
pF
pF
50 100 250
UNITS MIN
3. The emitter terminal should be connected to the ground
°C/W
GHz
°C/W
NE68030
mW
2SC4228
dB
dB
dB
dB
dB
dB
µA
µA
dB
dB
dB
dB
dB
dB
pF
12.5
10.9
13.5
1.5
1.7
2.9
9.4
5.3
6.8
8.5
3.6
0.3
10
17
terminal of the 3 terminal capacitance bridge.
30
10.5 12.5
50
150
833
200
1.0
1.0
0.7
00 (CHIP)
NE68000
12.5
18.5
16.2
10.2
TYP MAX MIN
100
1.7
2.6
7.5
10
17
50
8
NE68033
2SC3585
11.0
10.9
100 250
1.8
2.1
6.7
6.7
3.7
0.3
1.6
9.0
4.2
250
400
120
10
17
13
2.4
1.0
1.0
33
200
620
200
3.0
1.0
1.0
0.8
7.5
50
NE68018
10.5 12.5
2SC5013
50
10.2
12.7
15.5
TYP MAX MIN
100
1.6
1.8
8.2
9.8
4.6
0.3
10
14
19
18
NE68035
2SC3587
12.5
18.5
16.2
10.2
100 250
1.7
2.6
7.5
0.2
10
17
35
8
250
150
833
200
1.0
1.0
0.7
3
290
550
200
2.4
1.0
1.0
0.7
80
50
NE68039/39R
NE68019
2SC5008
13.5
18.5
11.8
TYP MAX
2SC4095
1.7
1.9
9.6
7.3
9.2
4.4
0.3
10
15
12.4
14.5
0.25 0.8
19
100 250
1.7
2.6
6.5
8.7
9.6
4.9
10
11
18
39
1000
160
100
200
200
1.0
1.0
0.7
620
200
2.5
1.0
1.0