dg646bh25 Dynex Semiconductor, dg646bh25 Datasheet - Page 2

• Manufacturer Part Number: dg646bh25
• Description: Gate Turn-off Gto - 2500v
• Manufacturer: Dynex Semiconductor

SURGE RATINGS
GATE RATINGS
THERMAL AND MECHANICAL RATINGS
Symbol
Symbol
Symbol
T
t
P
di
R
dV
t
R
OFF(min)
di
2/14
V
P
ON(min)
OP
I
I
FG(AV)
th(c-hs)
GQ
th(j-hs)
FGM
F
TSM
L
T
I
RGM
RGM
T
2
D
/T
/dt
S
vj
m
t
/dt
/dt
stg
SEMICONDUCTOR
Surge (non repetitive) on-state current
I
Critical rate of rise of on-state current
Rate of rise of off-state voltage
Peak stray inductance in snubber
circuit
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissible on time
Minimum permissible off time
Thermal resistance – junction to
heatsink surface
Contact thermal resistance
Virtual junction temperature
Operating junction/storage
temperature range
Clamping force
2
t for fusing
Parameter
Parameter
Parameter
Double side cooled
Single side cooled
Clamping force 20.0kN
With mounting compound
On-state (conducting)
I
T
= 2000A, V
This value may be exceeded during turn-off
V
D
= 1500V, I
To 66% V
To 66% V
DM
Test Conditions
10ms half sine. T
10ms half sine. T
= 2500V, T
Test Conditions
T
DRM
Rise time > 1.0 µs
Test Conditions
DRM
= 2000A, T
; R
C
; V
S
GK
RG
= 2.0µF
j
≤ 1.5 , T
≤ -2V, T
= 125° C, di
j
= 125° C, I
DC
Anode DC
Cathode DC
j
j
Per contact
= 125° C
= 125° C
j
= 125° C
j
= 125° C
GQ
FG
/dt = 40A/µs,
www.dynexsemi.com
> 30A,
Min.
18.0
-40
-
-
-
-
-
Min.
100
20
30
50
-
-
-
DG646BH25
0.018
0.045
0.006
Max.
0.03
22.0
125
125
Max.
18.0
16.2
1000
300
135
200
Max.
100
16
15
19
60
-
-
MA
Units
Units
Units
° C/W
° C/W
° C/W
° C/W
A/µs
V/µs
V/µs
A/µs
kA
kW
nH
kN
µs
µs
° C
° C
W
V
A
2
s