dg646bh25 Dynex Semiconductor, dg646bh25 Datasheet
dg646bh25
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dg646bh25 Summary of contents
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... 80° C, Double side cooled. HS Half sine 50Hz T = 80° C, Double side cooled. HS Half sine 50Hz DG646BH25 Gate Turn-off Thyristor DS4092-3.1 October 2005 (LN24294) 2500V 867A 2500A 1000V/µs 300A/µs Outline type code: H Fig. 1 Package outline ...
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... S Test Conditions This value may be exceeded during turn-off Test Conditions Double side cooled DC Anode DC Single side cooled Cathode DC Clamping force 20.0kN Per contact With mounting compound On-state (conducting) DG646BH25 Max. Units 18 16.2 MA > 30A, FG 300 A/µs = 125° C 135 V/µ 125° ...
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... T = 25° 16V, No gate/cathode resistor RGM V = 1500V 2000A, dI /dt = 300A/µ 30A, rise time < 1.0µ 2000A 2500V, DM Snubber capacitor C = 2.0µ /dt = 40A/µs GQ DG646BH25 Min Max. Units . - 2 100 1 3 1188 mJ - 1.2 µs - 3.0 µs ...
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... Snubber Capacitance C Fig.4 Maximum dependence of I 4/14 Conditions: o 125 DRM dI /dt = 40A/ (uF Fig.5 Steady state sinusoidal wave conduction loss – TCM S DG646BH25 Fig.3 On-state characteristics double side cooled www.dynexsemi.com ...
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... SEMICONDUCTOR Fig.6 Surge (non-repetitive) on-state current vs time Fig.8 Maximum (limit) transient thermal impedance – junction to case (° C/kW) www.dynexsemi.com Fig.7 Steady state rectangular wave conduction loss – double side cooled DG646BH25 5/14 ...
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... SEMICONDUCTOR Fig.9 Turn-on energy vs on-state current Fig.11 Turn-on energy vs on-state current 6/14 Fig.10 Turn-on energy vs peak forward gate current Fig.12 Turn-on energy vs peak forward gate current www.dynexsemi.com DG646BH25 ...
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... SEMICONDUCTOR Fig.13 Turn-on energy vs rate of rise of on-state current Fig.15 Delay time & rise time vs peak forward gate current www.dynexsemi.com Fig.14 Delay time & rise time vs turn-on current Fig.16 Turn-off energy vs on-state current DG646BH25 7/14 ...
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... SEMICONDUCTOR Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.19 Turn-off energy vs rate of rise of reverse gate current 8/14 Fig.18 Turn-off energy vs on-state current Fig.20 Turn-off energy vs on-state current www.dynexsemi.com DG646BH25 ...
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... SEMICONDUCTOR Fig.21 Gate storage time vs on-state current Fig.23 Gate fall time vs on-state current www.dynexsemi.com Fig.22 Gate storage time vs rate of rise of reverse gate current Fig.24 Gate fall time vs rate of rise of reverse gate current DG646BH25 9/14 ...
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... SEMICONDUCTOR Fig.25 Peak reverse gate current vs turn-off current Fig.27 Turn-off gate charge vs on-state current 10/14 Fig.26 Peak reverse gate current vs rate of rise of reverse gate current Fig.28 Turn-off gate charge vs rate of rise of reverse gate current www.dynexsemi.com DG646BH25 ...
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... SEMICONDUCTOR Fig.29 Rate of rise of off-state voltage vs gate cathode resistance www.dynexsemi.com DG646BH25 11/14 ...
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... SEMICONDUCTOR 12/14 Fig.30 General switching waveforms DG646BH25 www.dynexsemi.com ...
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... SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. www.dynexsemi.com Nominal weight: 820g Clamping force: 20kN ±10% Lead length: 505mm Package outline type code: H Fig.31 Package outline DG646BH25 13/14 ...
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... All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 14/14 e-mail: power_solutions@dynexsemi.com CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. DG646BH25 http://www.dynexsemi.com www.dynexsemi.com ...