dg648bh45 Dynex Semiconductor, dg648bh45 Datasheet - Page 9
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dg648bh45
Manufacturer Part Number
dg648bh45
Description
Gate Turn-off Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH45.pdf
(19 pages)
- Current page: 9 of 19
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4.0
3.0
2.0
1.0
0
0
8.0
6.0
4.0
2.0
Fig.14 Delay time & rise time vs peak forward gate current
0
0
500
Fig.13 Delay time & rise time vs turn-on current
Peak forward gate current I
20
1000
On-state current I
40
1500
Conditions:
T
C
R
dI/dt = 300A/ s,
dI
V
j
D
S
S
FG
Conditions: T
C
R
dI
= 125˚C, I
= 3000V
= 2.0 F,
= 10 Ohms,
S
S
/dt = 30A/ s,
FG
= 2.0 F, V
= 10 , dI
/dt = 30A/ s,
T
- (A)
FGM
60
2000
- (A)
T
= 2000A,
t
t
r
d
T
j
/dt = 300A/ s,
D
t
t
= 125˚C, I
d
r
= 3000V,
80
2500
FGM
= 30A,
3000
9/19
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