dg648bh45 Dynex Semiconductor, dg648bh45 Datasheet
dg648bh45
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dg648bh45 Summary of contents
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... Conditions 125 DRM Double side cooled. Half sine 50Hz Double side cooled. Half sine 50Hz. HS DG648BH45 Gate Turn-off Thyristor DS4093-3.0 January 2000 KEY PARAMETERS I TCM V DRM I T(AV /dt T Outline type code: H. Conditions RRM V ...
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SURGE RATINGS Symbol Parameter I Surge (non-repetitive) on-state current TSM for fusing di /dt Critical rate of rise of on-state current T dV /dt Rate of rise of off-state voltage D L Peak stray ...
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CHARACTERISTICS 125 C unless stated otherwise j Symbol Parameter V On-state voltage TM I Peak off-state current DM I Peak reverse current RRM V Gate trigger voltage GT I Gate trigger current GT I Reverse gate cathode ...
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CURVES 2.0 1.5 1.0 0.5 0 -50 Fig.1 Maximum gate trigger voltage/current vs junction temperature 4000 Measured under pulse conditions. I G(ON) Half sine wave 10ms 3000 2000 1000 0 0 4/19 - Junction temperature T ...
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Conditions 125˚ /dt = 40A/µs GQ 2000 1000 0 0 1.0 Snubber capacitance C Fig.3 Maximum dependence of I 0.020 0.015 0.010 0.005 0 0.001 0.01 Fig.4 Maximum (limit) transient thermal ...
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Conditions G(ON) 3000 2000 60˚ 30˚ 1000 0 0 500 Mean on-state current I Fig.6 Steady state rectangluar wave conduction loss - double side cooled 3000 Conditions G(ON) 2000 60˚ 30˚ 1000 0 ...
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Conditions 25˚ 30A, j FGM C = 2.0µF, S dI/dt = 300A/µs, 3000 dI /dt = 30A/µs FG 2000 1000 0 0 500 1000 On-state current I Fig.8 Turn-on energy vs on-state current 5000 4000 ...
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Conditions 125˚ 2 3000 dI /dt = 300A /dt = 30A 2000 1000 0 0 500 5000 4000 3000 2000 1000 ...
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On-state current I Fig.13 Delay time & rise time vs turn-on current 8.0 6.0 4.0 2 Peak forward gate current I Fig.14 Delay time & rise time vs peak ...
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Conditions 25˚ 2.0µ /dt = 40A/µs GQ 4000 3000 2000 1000 0 0 500 6000 Conditions 25˚ 2.0µ 2000A T 5000 4000 3000 2000 ...
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Conditions 125˚ 2.0µ /dt = 40A/µs GQ 8000 6000 4000 2000 0 0 500 1000 FIG 17 TURN OFF ENERGY Fig.17 Turn-off energy vs on-state current 12000 Conditions 125˚C, j ...
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Conditions 125˚ 0.75x /dt = 40A/µs GQ 6000 4000 2000 0 0 20.0 Conditions 2.0µ /dt = 40A/µs GQ 15.0 10.0 5 12/19 , DRM ...
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Conditions 2.0µ 2000A Rate of rise of reverse gate current dI Fig.21 Gate storage time vs rate of rise of reverse gate current 2.0 Conditions: C ...
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Conditions 2.0µ 2000A T 2.0 1.5 1.0 0.5 20 Fig.23 Gate fall time vs rate of rise of reverse gate current 800 Conditions 2.0µ /dt = 40A/µs GQ 600 400 ...
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Conditions 2 2000A T 700 650 600 550 500 20 30 Rate of rise of reverse gate current dI Fig.25 Peak reverse gate current vs rate of rise of reversegate current 8000 Conditions: ...
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Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 500 0 0.1 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/ Rate of rise ...
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... GQM di /dt = 40A 6000 RG(min 16V RG(max) These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 0. / TAIL G(ON) 0. 0.5I GQM ...
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PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 Cathode Aux. Tube Gate Tube 9.6 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or ...
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... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...