ssm6l35fe TOSHIBA Semiconductor CORPORATION, ssm6l35fe Datasheet - Page 3

• Manufacturer Part Number: ssm6l35fe
• Description: Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Switching Time Test Circuit
Q2 Switching Time Test Circuit
Q1 Usage Considerations
the SSM6L35FE). Then, for normal switching operation, V
than V
Q2 Usage Considerations
of the SSM6L35FE). Then, for normal switching operation, V
than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Let V
Take this into consideration when using the device.
Let V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
(a) Test Circuit
−
2.5V
th.
th.
th
th
0
This relationship can be expressed as: V
This relationship can be expressed as: V
be the voltage applied between gate and source that causes the drain current (I
be the voltage applied between gate and source that causes the drain current (I
2.5 V
10 μs
V
D.U. ≤ 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
0
V
D.U. ≤ 1%
V
(Z
Common Source
Ta = 25°C
: t
DD
IN
= -3 V
r
out
= 50 Ω)
, t
10 μs
: t
f
= 3 V
r
= 50 Ω)
< 5 ns
, t
IN
f
< 5 ns
IN
R
V
OUT
L
DD
R
V
OUT
L
DD
GS(off)
GS(off)
(b) V
(c) V
(c) V
(b) V
< V
< V
GS(on)
3
OUT
OUT
IN
GS(on)
th
th
IN
< V
< V
must be higher than V
GS(on).
GS(on).
must be higher than V
V
DS (ON)
V
V
V
2.5 V
DD
DS (ON)
DD
0 V
−2.5 V
0 V
t
on
10%
t
th,
on
10%
D
D
th,
t
and V
r
) to below (1 mA for the Q1 of
) to below (−1 mA for the Q2
10%
90%
t
r
and V
90%
10%
GS(off)
GS(off)
t
90%
off
t
SSM6L35FE
90%
off
must be lower
t
must be lower
f
2008-03-21
t
f