ssm6l35fe TOSHIBA Semiconductor CORPORATION, ssm6l35fe Datasheet
ssm6l35fe
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ssm6l35fe Summary of contents
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... DSS ±10 V GSS I -100 D I -200 DP Symbol Rating Unit P (Note 1) 150 150 ch −55 to 150 T stg 2 × SSM6L35FE 1.6±0.05 1.2±0. 1.Source1 4.Source2 2.Gate1 ES6 3.Drain2 JEDEC V JEITA V TOSHIBA 2-2N1D mA Weight: 3.0 mg (typ °C °C 2008-03-21 Unit 5.Gate2 6 ...
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... -2 off = 100 mA DSF D GS Equivalent Circuit (top view SSM6L35FE Min Typ. Max Unit ⎯ ⎯ ±10 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.4 1.0 ⎯ ⎯ (Note 2) 115 mS ⎯ (Note 2) 1.5 3 ⎯ ...
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... Take this into consideration when using the device. Q2 Usage Considerations Let V be the voltage applied between gate and source that causes the drain current ( the SSM6L35FE). Then, for normal switching operation, V than V This relationship can be expressed as: V th. Take this into consideration when using the device. ...
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... Common Source 25° 100°C −25° ( −50 100 1000 (mA) 4 SSM6L35FE I – Common Source 100°C 25°C −25° Gate–source voltage V ( – (ON) GS Common Source 25° ...
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... DS Common Source 2 25°C 100 1000 (mA SSM6L35FE ⎪Y ⎪ – Common Source 25° 100 Drain current I (mA – iss C oss Common Source ...
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... GS – Common Source Ta = 25° -100 -1000 −50 (mA SSM6L35FE I – Common Source - 100°C 25°C −25° Gate–source voltage V ( – (ON) GS Common Source -50 mA 25℃ ...
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... DS D 250 Common Source -2.5 V 200 Ta = 25°C 150 100 50 0 -100 -1000 *:Total Rating (mA SSM6L35FE ⎪Y ⎪ – Common Source 25°C -10 -100 Drain current I (mA – iss C oss C rss Common Source ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 SSM6L35FE 20070701-EN GENERAL 2008-03-21 ...