sud50n06-16 Vishay, sud50n06-16 Datasheet - Page 2

• Manufacturer Part Number: sud50n06-16
• Description: N-channel 60-v Degreee Celcious Mosfet
• Manufacturer: Vishay

Notes
a.
b.
c.
www.vishay.com
SUD50N06-16
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
2
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
a
Parameter
g
c
c
c
c
c
b
b
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
R
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
C
New Product
I
V
V
D
V
V
V
= 25_C)
V
DS
DS
GS
GS
DS
DS
^ 50 A, V
GS
I
= 60 V, V
= 60 V, V
= 30 V, V
V
= 10 V, I
= 10 V, I
F
= 0 V, V
V
V
V
V
V
V
DS
V
V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
F
GS
DS
= 0 V, V
= 30 A, V
= V
= 30 V, R
= 30 V, R
= 0 V, I
= 60 V, V
= 5 V, V
,
= 10 V, I
= 15 V, I
GEN
f = 1 MHz
DS
D
D
GS
GS
GS
GS
GS
= 20 A, T
= 20 A, T
, I
= 25 V, F = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
GS
D
= 10 V, I
D
GS
GS
D
= 250 mA
D
L
L
GS
= 250 mA
= "20 V
= 20 A
= 0.6 W
= 0.6 W
= 20 A
= 10 V
= 0 V
= 0 V
,
J
J
J
J
G
= 125_C
= 175_C
D
D
= 125_C
= 175_C
= 50 A
= 2.5 W
Min
2.0
60
50
0.0128
Typ
2100
300
125
1.7
1.0
20
30
11
10
12
20
10
50
8
S-31921—Rev. A, 15-Sep-03
a
Document Number: 72396
"100
Max
0.016
0.027
0.032
250
100
4.0
1.5
50
45
15
20
30
15
85
1
Unit
nC
nA
mA
m
pF
ns
ns
ns
W
W
V
V
A
S
A
V