bsc084p03ns3eg Infineon Technologies Corporation, bsc084p03ns3eg Datasheet - Page 3
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bsc084p03ns3eg
Manufacturer Part Number
bsc084p03ns3eg
Description
Optimostm P3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC084P03NS3EG.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC084P03NS3EG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.1
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
10 V, I
R
V
V
V
T
V
T
V
di
page 3
C
j
GS
DD
DD
GS
DD
GS
R
G
=25 °C
F
=25 °C
=15 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-15 V, V
=-24 V, I
=0 to -10 V
=-15 V, V
=0 V, I
D
=-50 A,
F
F
DS
=-50 A,
=|I
D
=-15 V,
GS
GS
=-50 A,
S
|,
=-
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
133.5
3190
1520
16.4
33.3
14.8
16.9
43.4
34.9
45.4
49.7
typ.
110
8.1
5.0
7.2
4.7
BSC084P03NS3E G
-
-
-
200.3
max.
4240
2020
24.6
50.0
12.2
19.7
10.8
23.7
57.7
46.4
-1.1
160
200
6.7
78
-
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2009-11-16