bsc084p03ns3eg Infineon Technologies Corporation, bsc084p03ns3eg Datasheet

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OptiMOS TM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC • 150 °C operating temperature • 100% Avalanche tested • V =25 V, specially suited for notebook applications GS • ESD protected • Pb-free; RoHS compliant ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 2) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

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Power dissipation P =f ≤10 s tot Safe operating area =25 ° ...

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Typ. output characteristics I =f =25 ° parameter - -6 -3 Typ. transfer characteristics I =f(V ); ...

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Drain-source on-state resistance DS(on typ -60 - Typ. capacitances C =f MHz DS ...

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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS ...

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Package Outline PG-TDSON-8 Dimensions in mm Rev. 2.1 BSC084P03NS3E G page 8 2009-11-16 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...