bsc042ne7ns3g Infineon Technologies Corporation, bsc042ne7ns3g Datasheet - Page 6

• Manufacturer Part Number: bsc042ne7ns3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
8
6
4
2
0
DS
=f(T
-60
4
3
2
1
0
); V
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=50 A; V
20
20
max
GS
T
=10 V
V
j
60
DS
[°C]
40
typ
[V]
100
60
140
Ciss
Crss
Coss
180
page 6
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
10
4
3
2
1
0
=f(T
SD
1
-60
0.0
)
j
); V
j
-20
GS
=V
0.5
DS
150 °C
20
91 µA
25 °C
V
T
25°C, max
j
SD
60
1.0
[°C]
[V]
BSC042NE7NS3 G
910 µA
100
1.5
140
150°C, max
2009-05-20
180
2.0