bsc042ne7ns3g Infineon Technologies Corporation, bsc042ne7ns3g Datasheet
bsc042ne7ns3g
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bsc042ne7ns3g Summary of contents
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TM OptiMOS 3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 150 125 100 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 400 10 V 360 320 280 240 200 160 120 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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PG-TDSON-8 (SuperSO8) Rev. 2.0 page 8 BSC042NE7NS3 G 2009-05-20 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...