bsc014ne2lsi Infineon Technologies Corporation, bsc014ne2lsi Datasheet - Page 5
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bsc014ne2lsi
Manufacturer Part Number
bsc014ne2lsi
Description
N-channel Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC014NE2LSI.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSC014NE2LSI
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSC014NE2LSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Table 6
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Final Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
Q
Q
V
Q
Q
Q
Symbol
I
I
V
Q
s
S,pulse
plateau
SD
g(th)
sw
g(sync)
oss
gs
gd
g
g
rr
1)
Min.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
4
Typ.
6.8
4.4
4.7
7
18.7
2.5
39
16
25
Typ.
-
-
0.56
5
Values
Values
Max.
-
-
-
-
-
-
-
-
-
Max.
74
296
-
-
OptiMOS™ Power-MOSFET
Unit
nC
V
nC
Unit
A
V
nC
Electrical characteristics
Note /
Test Condition
V
I
V
V
I
V
V
V
V
Note /
Test Condition
T
V
T
V
d
D
D
I
C
j
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A,
=30 A,
=25 °C
F
BSC014NE2LSI
=25 °C
=15 V,
/d
=0.1 V,
=12 V,
=0 to 4.5 V
=12 V,
=0 to 10V
=0 to 4.5 V
=12 V,
=0 V,
t
=400 A/µs
2.1, 2011-09-08
I
I
F
F
V
=8 A,
=8,
GS
=0 V