bsc014ne2lsi Infineon Technologies Corporation, bsc014ne2lsi Datasheet
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bsc014ne2lsi Summary of contents
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... OptiMOS™ BSC014NE2LSI 2.1, 2011-09-08 Final & ...
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... Package BSC014NE2LSI PG-TDSON-8 1) J-STD20 and JESD22 Final Data Sheet @ V =4 for target applications Unit V mΩ Marking 014NE2LI 1 OptiMOS™ Power-MOSFET BSC014NE2LSI Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools 2.1, 2011-09-08 ...
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... Symbol Values Min. Typ thJC - - thJA 2 (one layer, 70 µm thick) copper area for drain 2 OptiMOS™ Power-MOSFET BSC014NE2LSI Unit Note / Test Condition =25 ° = =100 ° =4 =25 ° ...
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... Values Min. Typ 2700 iss C - 1200 oss C - 120 rss d(on d(off 3 OptiMOS™ Power-MOSFET BSC014NE2LSI Electrical characteristics Unit Note / Test Condition Max = mV mA, referenced to D 25° 2 =250 µ 0.5 mA =20 V, ...
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... g(sync oss Symbol Values Min. Typ S,pulse OptiMOS™ Power-MOSFET BSC014NE2LSI Electrical characteristics Unit Note / Test Condition Max = = 10V ...
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... Power dissipation tot C Table 9 3 Safe operating area T =25 ° =f =25 °C; D=0; parameter Final Data Sheet 2 Drain current I =f(T ); parameter Max. transient thermal impedance Z =f(t ); parameter: D=t p (thJC OptiMOS™ Power-MOSFET BSC014NE2LSI Electrical characteristics diagrams : 2.1, 2011-09-08 ...
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... Table 11 7 Typ. transfer characteristics I =f(VGS); |V |>2 DS(on)max Final Data Sheet T =25 °C 6 Typ. drain-source on-state resistance C R =f(I GS DS(on) 8 Typ. forward transconductance g =f OptiMOS™ Power-MOSFET BSC014NE2LSI Electrical characteristics diagrams ); T =25 °C; parameter =25 °C j 2.1, 2011-09-08 ...
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... Drain-source on-state resistance =10 V DS(on Table 13 11 Typ. capacitances C=f f=1 MHz DS GS Final Data Sheet OptiMOS™ Power-MOSFET Electrical characteristics diagrams 10 Typ. gate threshold voltage V =f =10 mA GS(th Forward characteristics of reverse diode I =f(V ); parameter BSC014NE2LSI 2.1, 2011-09-08 ...
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... Table 14 13 Avalanche characteristics =25 Ω; parameter =f Table 15 15 Typ. drain-source leakage current I =f DSS DS GS Final Data Sheet 14 Typ. gate charge V =f(Q j(start) GS gate 16 Gate charge waveforms 8 OptiMOS™ Power-MOSFET BSC014NE2LSI Electrical characteristics diagrams ); I =30 A pulsed; parameter 2.1, 2011-09-08 ...
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... Package outline Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches Final Data Sheet OptiMOS™ Power-MOSFET 9 BSC014NE2LSI Package outline 2.1, 2011-09-08 ...
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... Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches Final Data Sheet OptiMOS™ Power-MOSFET 10 BSC014NE2LSI Package outline 2.1, 2011-09-08 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet OptiMOS™ Power-MOSFET erratum@infineon.com 11 BSC014NE2LSI Revision History 2.1, 2011-09-08 ...