bsc026n02ksg Infineon Technologies Corporation, bsc026n02ksg Datasheet - Page 6

• Manufacturer Part Number: bsc026n02ksg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
DS
=f(T
5
4
3
2
1
0
4
3
2
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=50 A; V
5
98%
20
GS
V
=4.5 V
T
DS
j
10
[°C]
Coss
Ciss
[V]
60
typ
Crss
100
15
140
page 6
20
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1.6
1.2
0.8
0.4
10
10
10
10
10
0
=f(T
SD
-60
-1
3
2
1
0
)
0
j
); V
j
GS
-20
150 °C
=V
0.5
DS
20
200 µA
T
V
25 °C
j
SD
[°C]
1
60
[V]
25 °C, 98%
BSC026N02KS G
150 °C, 98%
2000 µA
100
1.5
140
2007-10-23
2