bsc026n02ksg Infineon Technologies Corporation, bsc026n02ksg Datasheet
![no-image](/images/no-image-200.jpg)
bsc026n02ksg
Available stocks
Related parts for bsc026n02ksg
bsc026n02ksg Summary of contents
Page 1
OptiMOS ® 2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC • Super Logic level 2.5V rated; N-channel • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
Page 4
Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter ...
Page 5
Typ. output characteristics I =f =25 ° parameter 200 4 V 175 3 V 150 125 100 Typ. transfer characteristics I =f ...
Page 6
Drain-source on-state resistance =4.5 V DS(on 98 -60 - Typ. capacitances C =f MHz ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f BR(DSS) j ...
Page 8
Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev.1.0 PG-TDSON-8 page 8 BSC026N02KS G 2007-10-23 ...
Page 9
Package Outline PG-TDSON-8: Tape Dimensions in mm Rev.1.0 page 9 BSC026N02KS G 2007-10-23 ...
Page 10
Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...