bsc026n02ksg Infineon Technologies Corporation, bsc026n02ksg Datasheet

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bsc026n02ksg

Manufacturer Part Number
bsc026n02ksg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC026N02KSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSC026N02KSG
Quantity:
5 000
Rev.1.0
1)
Features
• For fast switching converters and sync. rectification
• Qualified according to JEDEC
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
BSC026N02KS G
J-STD20 and JESD22
®
2 Power-Transistor
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
D
D,pulse
AS
GS
Marking
26N02KS
V
V
V
V
V
R
T
I
I
di /dt =200 A/µs,
T
D
D
GS
GS
GS
GS
GS
page 1
thJA
C
j,max
=50 A, R
=50 A, V
=25 °C
=4.5 V, T
=4.5 V, T
=2.5 V, T
=2.5 V, T
=4.5 V, T
=45 K/W
=150 °C
3)
DS
GS
C
C
C
C
A
2)
=25 °C
=100 °C
=25 °C
=100 °C
=25 °C,
=16 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
Value
100
100
200
550
±12
85
65
25
PG-TDSON-8
6
BSC026N02KS G
100
2.6
20
Unit
A
mJ
kV/µs
V
V
mΩ
A
2007-10-23

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bsc026n02ksg Summary of contents

Page 1

OptiMOS ® 2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC • Super Logic level 2.5V rated; N-channel • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 200 4 V 175 3 V 150 125 100 Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance =4.5 V DS(on 98 -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f BR(DSS) j ...

Page 8

Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev.1.0 PG-TDSON-8 page 8 BSC026N02KS G 2007-10-23 ...

Page 9

Package Outline PG-TDSON-8: Tape Dimensions in mm Rev.1.0 page 9 BSC026N02KS G 2007-10-23 ...

Page 10

Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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