bsc100n06ls3g Infineon Technologies Corporation, bsc100n06ls3g Datasheet - Page 6

• Manufacturer Part Number: bsc100n06ls3g
• Description: Optimostm3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
DS
=f(T
20
18
16
14
12
10
4
3
2
1
8
6
4
2
0
); V
0
-60
j
); I
GS
D
=0 V; f =1 MHz
=50 A; V
-20
max
20
20
GS
V
=10 V
T
typ
DS
j
60
[°C]
Coss
Crss
[V]
Ciss
100
40
140
180
page 6
60
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
0.5
150 °C
DS
23 µA
20
; I
D
=100 µA
25 °C
V
T
25 °C, max
SD
j
1.0
60
230 µA
[°C]
[V]
BSC100N06LS3 G
100
1.5
140
150 °C, max
2008-12-19
180
2.0