bsc100n06ls3g Infineon Technologies Corporation, bsc100n06ls3g Datasheet - Page 4

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bsc100n06ls3g

Manufacturer Part Number
bsc100n06ls3g
Description
Optimostm3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
60
50
40
30
20
10
10
10
10
10
10
0
DS
-1
3
2
1
0
0
10
C
); T
)
-1
C
p
=25 °C; D =0
50
limited by on-state
resistance
10
0
T
V
C
100
DS
[°C]
[V]
DC
10 ms
1 ms
10
1
100 µs
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
60
50
40
30
20
10
=f(t
10
10
10
10
0
C
-1
-2
1
0
); V
0
10
p
)
single pulse
0.02
0.01
-6
0.05
0.1
0.5
0.2
GS
≥10 V
10
p
/T
-5
50
10
-4
T
C
100
t
10
p
[°C]
[s]
-3
BSC100N06LS3 G
10
-2
150
10
-1
2008-12-19
200
10
0

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