si7358adp-t1 Vishay, si7358adp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7358adp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73161
S-41959—Rev. A, 25-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
6
5
4
3
2
1
0
60
10
1
0.00
0
0
V
I
D
5
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 23 A
0.2
10
= 15 V
V
Q
SD
T
10
g
J
= 150_C
ï Total Gate Charge (nC)
ï Source-to-Drain Voltage (V)
V
I
D
GS
0.4
15
ï Drain Current (A)
Gate Charge
20
= 4.5 V
20
0.6
30
25
0.8
V
30
GS
T
40
J
= 10 V
= 25_C
1.0
35
New Product
50
40
1.2
0.020
0.016
0.012
0.008
0.004
0.000
6000
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
ï50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
ï25
V
I
D
C
GS
= 23 A
rss
5
V
2
V
GS
= 10 V
DS
T
J
0
ï Gate-to-Source Voltage (V)
ï Junction Temperature (_C)
ï Drain-to-Source Voltage (V)
10
Capacitance
25
C
4
oss
I
Vishay Siliconix
D
= 23 A
15
50
C
iss
Si7358ADP
6
75
20
100
www.vishay.com
8
25
125
10
150
30
3