si7358adp-t1 Vishay, si7358adp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7358adp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7358ADP
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
GS
1
V
a
a
DS
= 10 thru 4 V
Output Characteristics
a
ï Drain-to-Source Voltage (V)
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
oss
t
SD
rss
t
iss
rr
fs
gs
gd
r
f
g
g
4
3 V
5
New Product
V
V
I
DS
DS
V
D
DS
DS
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
V
V
V
V
V
V
V
V
= 15 V, V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
S
DS
GS
5 ,
DD
DD
GS
DS
= 4.5 A, V
= 0 V, V
= V
w 5 V, V
= 30 V, V
= 10 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
GS
ss
ss
, I
= 10 V, R
= 4.5 V, I
GS
= 0 V, T
= 0 V, f = 1 kHz
D
GS
D
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 23 A
5 ,
= 20 A
= 15 W
= 15 W
= 23 A
= 10 V
= 0 V
= 0 V
J
D
D
g
g
= 55_C
60
50
40
30
20
10
= 6 W
= 23 A
0
0.0
3
0.5
V
GS
1.0
Transfer Characteristics
ï Gate-to-Source Voltage (V)
Min
1.0
0.5
30
1.5
T
2.0
0.0032
0.0045
C
Typ
4650
0.75
30.5
12.5
880
390
25_C
1.0
90
10
21
10
83
27
50
= 125_C
S-41959—Rev. A, 25-Oct-04
Document Number: 73161
2.5
0.0042
0.0059
"100
Max
130
3.0
1.1
1.5
40
35
20
45
80
3.0
1
5
3.5
ï55_C
Unit
nA
mA
mA
nC
pF
p
ns
W
W
W
V
A
S
V
C
4.0