si7820dn-t1 Vishay, si7820dn-t1 Datasheet - Page 4

• Manufacturer Part Number: si7820dn-t1
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

Si7820DN
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
0.6
0.4
0.2
0.01
−50
0.1
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
I
D
J
− Temperature (_C)
= 250 mA
25
10
−3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
1000
0.01
0.1
10
100
1
10
0.1
−2
*Limited by r
*V
125
GS
Limited
I
Single Pulse
D(on)
T
u minimum V
A
Square Wave Pulse Duration (sec)
V
= 25_C
150
DS
1
DS(on)
− Drain-to-Source Voltage (V)
Safe Operating Area
10
−1
GS
BV
at which r
10
DSS
Limited
DS(on)
1
100
50
40
30
20
10
is specified
I
DM
0
0.01
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Juncion-to-Ambient
1000
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
Time (sec)
t
A
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
S-51129—Rev. C, 13-Jun-05
1
2
10
(t)
Document Number: 72581
= 65_C/W
100
600
600