si7820dn-t1 Vishay, si7820dn-t1 Datasheet - Page 3

• Manufacturer Part Number: si7820dn-t1
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72581
S-51129—Rev. C, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.35
0.28
0.21
0.14
0.07
0.00
10
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 2.6 A
0.2
On-Resistance vs. Drain Current
2
V
= 100 V
2
GS
V
SD
Q
= 6 V
T
g
J
I
− Source-to-Drain Voltage (V)
D
− Total Gate Charge (nC)
= 150_C
0.4
4
− Drain Current (A)
Gate Charge
4
0.6
6
6
0.8
8
V
GS
T
= 10 V
J
8
= 25_C
10
1.0
10
12
1.2
800
700
600
500
400
300
200
100
0.8
0.6
0.4
0.2
0.0
2.4
2.0
1.6
1.2
0.8
0.4
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
C
D
GS
oss
= 2.6 A
V
V
2
= 10 V
GS
DS
T
20
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
rss
40
50
C
iss
6
75
I
Si7820DN
D
= 2.6 A
100
60
www.vishay.com
8
125
150
10
80
3