si7842dp-t1 Vishay, si7842dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7842dp-t1
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7842DP
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
20
10
1
0.0
- 50
0.01
0.1
2
1
10
- 25
Source-Drain Diode Forward Voltage
-4
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V
SD
0
T
- Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
J
J
= 150 °C
- Temperature (°C)
25
10
-3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 μA
75
0.8
T
100
J
10
= 25 °C
1.0
-2
125
Square Wave Pulse Duration (sec)
1.2
150
10
-1
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
1
0
0
0.001
On-Resistance vs. Gate-to-Source Voltage
2
V
0.01
GS
Single Pulse Power
10
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
I
Time (sec)
D
- T
= 7.5 A
t
1
A
S-52554-Rev. C, 19-Dec-05
0.1
= P
Document Number: 71617
t
2
DM
6
Z
thJA
100
thJA
t
t
1
2
(t)
= 60 °C/W
1
8
600
10
10