si7842dp-t1 Vishay, si7842dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7842dp-t1
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71617
S-52554-Rev. C, 19-Dec-05
V
GS
= 10 thru 4 V
0.040
0.032
0.024
0.016
0.008
0.000
10
20
16
12
8
6
4
2
0
8
4
0
0.0
0
0
V
I
D
DS
0.5
On-Resistance vs. Drain Current
= 7.5 A
4
3
V
= 15 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
1.0
V
I
D
GS
- Total Gate Charge (nC)
Gate Charge
8
6
- Drain Current (A)
= 4.5 V
1.5
12
9
2.0
3 V
2 V
V
16
12
GS
2.5
= 10 V
20
15
3.0
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
8
4
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.5 A
0.5
= 10 V
6
V
V
GS
T
Transfer Characteristics
C
DS
0
J
rss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
- Drain-to-Source Voltage (V)
Capacitance
25
12
T
25 °C
C
= 125 °C
C
1.5
C
50
Vishay Siliconix
oss
iss
18
75
Si7842DP
2.0
www.vishay.com
100
- 55 °C
24
2.5
125
30
150
3.0
3